Thermal Oxidation Improves Photoelectric Properties of Graphene

Thermal Oxidation Improves Photoelectric Properties of Graphene

According to the report of the American Physicist Organization Network on February 19th, researchers at Northwestern University in the United States used a new thermal oxidation method to improve the control of their photoelectric properties without compromising the lattice structure of graphene and prepare it for the future. Faster, lighter, and more flexible electronics have taken a step. The relevant research results were published in the February 19 issue of Nature-Chemical.

Graphene is an atomic-size honeycomb lattice material made of carbon atoms that is harder than diamonds and can be stretched like rubber. Its electrical and thermal properties exceed any copper wire and its weight is almost zero. As a result, scientists have high hopes for their wide application in many fields. In its application of more electronic products, many experts believe that it is more competitive than silicon, such as the conversion of integrated circuits and ultra-high-speed computers, mobile phones and related portable electronic devices.

How to master and control the electronic properties of graphene is not easy for researchers, which is a major challenge inherent in this material. Unlike semiconductor silicon, graphene has a zero band gap between the valence band and the conduction band, and band gap is the key to electrical application, enabling the material to realize the opening and closing of electron flow. If it is difficult to "turn off" the passing current, it is not suitable for a digital circuit composed of a large number of integrated circuits.

In order to overcome this difficulty and make graphene more capable, many researchers around the world are developing and testing various chemical methods that can change the material. The resulting graphene oxide is usually regarded as a defect state material, and because of its inherent defects and rich functional groups, it is possible to regulate its photoelectric properties through chemical pathways. The most common is the Hummers method graphene oxide developed since the 1940s, but its use of strong acids can cause irreversible damage to the graphene lattice structure.

In operation, researchers at Northwestern University vented oxygen into an ultra-high-temperature vacuum chamber where heated tungsten filaments heated to 1500 degrees Celsius dissolved the oxygen molecules into oxygen atoms. Later, highly active oxygen atoms are uniformly embedded in the graphene lattice. Spectroscopic measurements show that a large number of oxygen-containing functional groups are covalently bonded to the graphene oxide's electronic properties, suggesting that it has a property that can be regulated based on graphene equipment.

Mark, a professor of materials science and engineering at the university, said that the new method does not cause corresponding damage to the graphene oxide in the process, and that the generated graphene oxide has a high degree of chemical homogeneity; and Its oxidation process is reversible. As a result, the tunability of chemically treated graphene is further improved.

Mark said: “It is not yet clear how this work will affect the application in the real world overnight, but it is clearly a step in the right direction.” (Hua Ling)

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