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According to a report from the Physicist Organization Network on May 9 (Beijing time), researchers at the Burns School of Engineering at the University of California, Riverside, have developed a new technology that can use graphene to achieve large-scale cooling of high-power semiconductor devices. Solve the problem of heat dissipation of semiconductor materials used in traffic lights and electric vehicles. The relevant research report was published in the magazine "Nature and Communications" on May 8.
Since the 1990s, the semiconductor material gallium nitride (GaN) has been used for the manufacture of strong light, and is used in wireless devices because of its high efficiency and high voltage resistance. However, like all high-power operating devices, GaN transistors emit a considerable amount of heat and require rapid and effective removal. Scientists have tried various thermal management approaches such as flip chip and composite substrate, but the results are not satisfactory. How to cool down these devices still confuses the academic world, and the market share and application range of the GaN electronic industry are also limited due to the difficulty in heat dissipation.
The new technology developed in the laboratory of nanodevices will improve this situation. The research team was led by Professor Alexander Balankin of the Electrical Engineering Professor who, when performing microRaman spectroscopic temperature measurements, found that by introducing alternate heat-dissipation channels made of multilayer graphene, nitrogen can be made available under high-power operation conditions. The hot spot in the transistor is reduced by 20°C and the life of the associated device is extended by a factor of 10.
Barankin said that this represents a transformative progress in the field of thermal management. Unlike metal or semiconductor thin films, multi-layer graphene can maintain good thermodynamic properties even when its thickness is only a few nanometers, which makes them excellent alternatives for manufacturing side thermal conductive sheets and connecting wires. The researchers designed and built a graphene "quilt" on the GaN transistor that allows it to remove and conduct heat from the hot spots. Computer simulations have shown that the use of a substrate with a higher thermal resistance enables graphene “quilts†to function better on GaN devices. (Reporter Zhang Hao)
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