New materials are expected to bring ultra-fast all-optical communications technology

New materials are expected to bring ultra-fast all-optical communications technology

A new type of "plasma-oxidizing material" is expected to bring ultra-fast all-optical communications equipment, at least 10 times faster than traditional technologies.

Purdue University researchers have developed a new "plasma oxidizing material" that promises to bring ultra-fast all-optical communications technology, at least 10 times faster than traditional technologies. Related papers were published in the recent "Optimography" magazine of the American Optical Society.

Optical communications use laser pulses to transmit information along optical fibers for telephony services, the Internet, and cable television. All-optical technologies, whether data streams or control signals, are optical pulses that do not use any electrical signals to control the system. The paper's first author, Ph.D. student Nathaniel Kinsey, said that for data transmission, it is necessary to be able to modulate the amount of reflected light. "We can design a thin film to increase or decrease the reflected light, using light reflections. Increases or decreases to encode data, and changes in reflection will cause changes in transmission."

The researchers demonstrated that the optical thin film material made of aluminum-doped zinc oxide (AZO) is modulatable. They do aluminum-doped zinc oxide, which is filled with aluminum atoms to change the optical properties of the material, making it like a metal at specific wavelengths and high-resistance media at other wavelengths.

The refractive index of the AZO film is close to zero, and it can control the light using the electron cloud-like surface plasmon polaritons. Pulsed lasers change the refractive index of AZO and modulate the amount of reflected light. This material can work in the near infrared spectral range, can be used in optical communications, and is compatible with complementary metal oxide semiconductors (CMOS).

The researchers' idea was to use this material to create an "all-optical plasma modulator" or optical transistor. In electronic devices, silicon-based transistors switch power supplies and amplify signals. Optical transistors use light instead of electricity to perform similar tasks, which can greatly speed up system operation.

By irradiating this material with a pulsed laser, the electrons in the material will move from one energy level (the valence band) to the higher energy level (the conduction band), leaving behind holes and finally recombining with these holes. The speed of transistor switching is limited by the time to complete this cycle. In their AZO film, this cycle is about 350 femtoseconds, about 5,000 times faster than crystalline silicon. Convert this speed increase into equipment, at least 10 times faster than traditional silicon-based electronic devices. (Reporter Chang Lijun)

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